← Back to CoursesSemiconductor Science: Advanced

Neuroanatomy Explorer

Drag to rotate · scroll to zoom · click regions to explore

View
Loading 3D model…

Click a region
to explore it

Memory Deck

Flip each card and rate whether you knew it. Your score is saved.

Term
Definition

Deck complete — score saved.

Match the Pairs

Match each term to its definition. Finish the board to earn your score.

All matched — score saved.

Concept Constellation

Every key idea in this course, mapped as an explorable 3D constellation. Drag to rotate, scroll to zoom, click a node.

Click a node to read its definition.

pn Junctions, Heterojunctions, and Built-In Electrostatics

Manual: General · Subject: Semiconductor Science

Analyze junction formation, depletion approximation, band alignment, and electrostatic scaling in semiconductor heterostructures.

The pn Junction

Built-in potential

When p-type and n-type regions are brought into contact, diffusion of majority carriers leaves behind ionized dopants and creates a depletion region. The built-in potential is approximately Vbi=kBTqln⁡ ⁣(NANDni2)V_{bi} = \frac{k_B T}{q}\ln\!\left(\frac{N_A N_D}{n_i^2}\right) for an abrupt junction under ideal assumptions.

⚠️

Model assumption

The depletion approximation works best when the depletion width is much larger than the Debye length and when free-carrier density inside the space-charge region is small.

Depletion Width and Junction Capacitance

Space-charge region

For an abrupt one-sided junction, the depletion width depends on doping asymmetry and applied bias. Junction capacitance arises from the bias-dependent depletion width and is central to diode switching, varactors, and charge sensing.

What is the main physical origin of the depletion region in a pn junction?

Write the ideal abrupt-junction built-in potential formula.

Heterojunction Band Alignment

Anderson model and real interfaces

In heterojunctions, differences in electron affinity and band gap produce conduction- and valence-band offsets. These offsets govern carrier confinement, tunneling, and injection. Real interfaces can deviate from ideal alignment due to interface states, strain, dipoles, and chemical intermixing.

Junction types

TypeKey featureTypical use
HomojunctionSame material, different dopingDiodes, BJTs
Type-I heterojunctionBoth carriers confined in same layerLasers, LEDs, quantum wells
Type-II heterojunctionElectrons and holes separated spatiallyPhotovoltaics, charge separation
Graded junctionComposition varies continuouslyField management, reduced barriers

A type-II heterojunction is especially useful when one wants to:

Why do interface states matter in heterojunctions?