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The p-n Junction at Equilibrium

Manual: General · Subject: Semiconductor Science

Discover how joining p-type and n-type regions creates a rectifying junction.

Built-in Fields and Depletion Regions

Formation of the junction

When p-type and n-type regions are brought together, electrons and holes diffuse across the interface and recombine near the junction. This leaves behind fixed ionized dopants, producing a depletion region and an internal electric field.

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Built-in potential

The junction reaches equilibrium when drift current exactly balances diffusion current, creating a built-in potential barrier.

Equilibrium band bending

Band bending reflects the electrostatic potential across the depletion region. At equilibrium, the Fermi level is flat across the junction, even though the bands curve.

p-n junction concepts

ConceptMeaningWhy it matters
Depletion regionArea depleted of mobile carriersCreates rectification
Built-in potentialBarrier at equilibriumControls current flow
Band bendingEnergy shift across spaceVisualizes electrostatics
Charge neutralityBalanced fixed chargeDetermines depletion width

What is the depletion region primarily composed of?

What balances diffusion current at equilibrium in a p-n junction?

How to analyze an equilibrium p-n junction

  1. 1

    Identify the dopings on both sides.

  2. 2

    Determine which carriers diffuse across the junction.

  3. 3

    Infer the sign of the space charge in the depletion region.

  4. 4

    Use equilibrium conditions to conclude that the Fermi level is constant.

Before and after junction formation

Separate p and n regions

  • No built-in field at the interface
  • Carrier distributions are uniform in each region

Joined p-n junction

  • Depletion region forms
  • Band bending and barrier potential appear

At equilibrium across a p-n junction, what must be flat?

What physical process creates the depletion region?