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Carrier Transport: Drift, Diffusion, and Mobility

Manual: General · Subject: Semiconductor Science

Analyze how carriers move under electric fields and concentration gradients.

How Carriers Move in Real Devices

Drift transport

Under an electric field EE, carriers acquire a drift velocity vd=μEv_d = \mu E, where μ\mu is mobility. The resulting current density is Jdrift=qnμnE+qpμpEJ_{\text{drift}} = qn\mu_nE + qp\mu_pE.

Diffusion transport

When carrier concentration varies with position, carriers diffuse from high concentration to low concentration. Electron and hole diffusion currents are proportional to concentration gradients, with Jn,diff=qDndndxJ_{n,\text{diff}} = qD_n\frac{dn}{dx} and Jp,diff=−qDpdpdxJ_{p,\text{diff}} = -qD_p\frac{dp}{dx} under common sign conventions.

ℹ️

Mobility is not constant in practice

Mobility decreases with lattice scattering, ionized impurity scattering, and high electric field effects, so temperature and doping both influence transport.

Transport concepts

ConceptDriving forceTypical expression
DriftElectric fieldvd=μEv_d = \mu E
DiffusionConcentration gradientFick's-law based current
MobilityMaterial response to fieldHigher mobility means easier motion
Diffusion lengthRecombination-limited spreadRelated to lifetime and diffusivity

What primarily drives diffusion current in a semiconductor?

Write the drift velocity relation for carriers in an electric field.

Solving simple transport problems

  1. 1

    Identify whether drift, diffusion, or both are present.

  2. 2

    Write the correct current-density expression.

  3. 3

    Substitute carrier density, mobility, and field or gradient values.

  4. 4

    Check sign conventions carefully for electrons and holes.

Drift vs diffusion

Drift

  • Caused by electric field
  • Can produce current even in uniform carrier density

Diffusion

  • Caused by concentration gradient
  • Can occur even with zero electric field

Which factor generally reduces mobility in a doped semiconductor?

Name one physical mechanism that limits mobility at higher temperatures.