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Doping, Ionization, and Compensation

Manual: General · Subject: Semiconductor Science

Explore how intentional impurities control carrier type and concentration.

Engineering Carriers with Dopants

Donors and acceptors

Donor impurities such as phosphorus in silicon contribute extra electrons, creating n-type material. Acceptor impurities such as boron create p-type material by introducing available hole states. Dopants shift the Fermi level and strongly increase conductivity.

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Compensation

If both donor and acceptor dopants are present, the effective carrier type depends on the difference between their concentrations, not just the presence of one dopant species.

Ionization and temperature

At low temperature, some dopants may remain neutral if thermal energy is insufficient to ionize them. As temperature increases, dopant ionization improves, but very high temperature can also increase intrinsic carrier generation and reduce the dominance of doping.

Dopant roles in silicon

Dopant typeExampleCarrier produced
DonorPhosphorusElectron
DonorArsenicElectron
AcceptorBoronHole
AcceptorGalliumHole

A silicon sample doped with boron is most likely to be what type of semiconductor?

What is compensation doping?

Estimating majority-carrier concentration

  1. 1

    Identify donor and acceptor concentrations.

  2. 2

    Determine the net doping level using the difference between donors and acceptors.

  3. 3

    Assume charge neutrality when fully ionized if justified.

  4. 4

    Use the net majority-carrier concentration as the first approximation.

n-type vs p-type

n-type

  • Electrons are majority carriers
  • Donors shift the Fermi level upward

p-type

  • Holes are majority carriers
  • Acceptors shift the Fermi level downward

Why can heavily doped semiconductors show stronger conductivity even before considering mobility changes?

Name one common donor dopant used in silicon.